Centinel Spine recently announced the release of a landmark study supporting the long-term clinical success and durability of the prodisc L Lumbar Total Disc Replacement (TDR) technology.1 The study has been posted electronically by The Journal of Bone & Joint Surgery, considered the gold-standard in peer-reviewed orthopedic scientific information. This retrospective study expands the evidence validating the fixed-core design of the prodisc L device and includes 1,187 patients that underwent TDR surgery for chronic lumbar degenerative disc disease (DDD), making it one of the largest lumbar TDR patient cohorts ever evaluated. The lead author of the study is Thierry Marnay, MD.
Please share the electronic link to the study with surgeon customers interested in learning more about long term prodisc L outcomes. This may be especially useful for surgeons concerned about lumbar TDR safety and durability over time.
Key Takeaways from the Published Study:
- The study includes all eligible prodisc L procedures performed at a single institution (Montpellier Spine Institute (CCV) Clinique du Parc, Castelnau-le-Lez, France) from 1999 to 2013.
- The study includes 1,187 patients undergoing a 1- or 2-level prodisc L procedure, with and without prior surgery, and followed from 7 to 21 years (mean of 11 years and 8 months).
- Of the 1,187 patients, 772 underwent a 1-level lumbar TDR procedure and 415 underwent a 2-level procedure. A total of 373 of the patients had prior discectomy surgery.
- According to the long-term results of the study, there was statistically equivalent improvement in outcomes for 1-level lumbar TDR and 2-level lumbar TDR, for patients both with and without prior discectomy surgery.
- This study also demonstrates the robust long-term clinical success and implant survivorship of prodisc L through an extremely low index revision rate of 0.67%.
- Additionally, a low adjacent-level surgery rate of 1.85% confirmed that the prodisc L design coupled with lumbar TDR mobility restoration supports long-term preservation of adjacent levels.